Path:OKDatasheet > Semiconductor Datasheet > Cree Datasheet > W4TXE0X-0D00

W4TXE0X-0D00 specification: Diameter 76.2mm; lsemi-insulating (prototype); silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition

W4TXE0X-0D00 Liknande

  • W4TXE0X-0D00
    • Diameter 76.2mm; lsemi-insulating (prototype); silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition

W4TXE0X-0D00 Datasheet och Spec

Tillverkare : Cree 

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Temperature : Min 0 °C | Max 0 °C

Storlek : 306 KB

Ansökan : Diameter 76.2mm; lsemi-insulating (prototype); silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition 

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