| Del nr | Tillverkare | Ansökan |
|---|
| PLP10-063 | Hamamatsu | High-repetition up to 100MHz picosecond light pulser; wavelength range from 375 to 1,550nm |
| G9204-512S | Hamamatsu | Number of pixels512; supply voltage5.0V; clock pulse voltage 5.5V; InGaAs linear image sensor for DWDM wavelength monitor and optical spectrum analyzer |
| G8211-11 | Hamamatsu | Supply voltage0.3-5.5V; InGaAs PIN photodiode with preamp pigtail type, 1.3/1.55um, 156, 622Mbps/1.25, 2.5Gbps. For optical fiber communications, fiber channel, gigabit enthernet, HDTV, SDH |
| C7040 | Hamamatsu | CCD multichannel detector head. Designed for front-illuminated CCD area image sensor |
| G8342-23 | Hamamatsu | Supply voltage0.3-3.8V; InGaAs PIN photodiode with preamp receptacle type, 1.3/1.55um, 156, 622Mbps/1.25, 2.5Gbps. For optical fiber communications, fiber channel, gigabit enthernet, HDTV, SDH |
| C4757 | Hamamatsu | Supply voltage+-18V; signal processing circuit for 2-D PSD |
| H7732-10 | Hamamatsu | Input voltage 11.5-15.5V; max input current40mA; compact side-on PMT photosensor module |
| R2257 | Hamamatsu | Spectral responce 300 to 900nm; 2700Vdc; anode current 0.2mA; photomultiplier tube |
| G5853-11 | Hamamatsu | Reverse voltage2V; spectral response range1.2-2.6um; InGaAs PIN photodiode long wavelength type (up to 2.6um). For NIR (near infrared) photometry, gas analyzer, spectrophotometer |
| H7260K-04 | Hamamatsu | Spectral responce185-880nm; between anode and cathode800Vdc; linear array multianode PMT and assembly |
| C3683-01 | Hamamatsu | Supply voltage+-18V; signal processing circuit for 1-D PSD |
| G1736 | Hamamatsu | Active area size2.7x2.7mm; reverse voltage5V; GaAsP photodiode - diffusion type (red sensitivity extended type). For analytical instruments, color identification |
| G8423-05 | Hamamatsu | Reverse voltage2V; spectral response range1.2-2.6um; InGaAs PIN photodiode long wavelength type (up to 2.6um). For NIR (near infrared) photometry, gas analyzer, spectrophotometer |
| C5658 | Hamamatsu | Supply voltage +13.5V; APD module which detects optical signals at 1GHz, with high sensitivity |
| L6690 | Hamamatsu | 3A; 2V; 3W; infrared pulsed laser diode. For laser radar, range finder, excitation light source, optical trigger, security barrier |
| G8795-02 | Hamamatsu | Supply voltage0.3-6V; InGaAs PIN photodiode with preamp 1.3/1.55um, 156, 622Mbps/1.25, 2.5Gbps. For optical fiber communications, fiber channel, gigabit enthernet, HDTV, SDH |
| G9201-256S | Hamamatsu | Number of pixels256; supply voltage5.0V; clock pulse voltage 5.5V; InGaAs linear image sensor for DWDM wavelength monitor and optical spectrum analyzer |
| C4777-01 | Hamamatsu | Supply voltage 7-16V; APD module integrated with peripheral circuit |
| L8347-11 | Hamamatsu | Connector typeSC ;2V; 0.1mW; laser diode pigtail type, 1.3um, 1.25, 2.5Gpbs. For optical fiber communications, fiber channel, gigabit ethernet, HDTV, SDH |
| F2224-19M | Hamamatsu | Circular MCP and assembly series. For analytical instruments, electron tibe, cosmic measurement, high energy physics |
| G7751-01 | Hamamatsu | Active area 0.6mm; external input voltage+-18V; infrared detector module with preamplifier high sensitivity module of easy-to-use. For infrared detection |
| G8605-23 | Hamamatsu | 0.2mW; 1.0A; spectral response range0.9-1.65um; InGaAs PIN photodiode thermoelectrically cooled NIR (near infrared) detector with low high-speed response. For optical power meter, water content analyzer, laser diode life test |
| PLP10-065C | Hamamatsu | High-repetition up to 100MHz picosecond light pulser; wavelength range from 375 to 1,550nm |
| G8376-02 | Hamamatsu | Reverse voltage20V; spectral response range0.9-1.7um; InGaAs PIN photodiode standard type. For NIR (near infrared) photometry, optical communication |
| F2813-31P | Hamamatsu | Rectangular MCP and assembly series. For detection and imaging of electron, ions, VUV lights, X-rays and V-rays mass spectroscopy, energy spectroscopy and high-speed response CRTs |
| H8568-01 | Hamamatsu | Input voltage 11.5-15.5V; max input current7-25mA; compact side-on PMT photosensor module |
| H5773-20 | Hamamatsu | Input voltage 11.5-15.5V; photosensor module in metal package PMT |
| L6309 | Hamamatsu | 30W; L2D2 lamps deuterium lamp |
| P1201 | Hamamatsu | Supply voltage100Vdc; 70mW; CdS photoconductive cell resin coating type. Standard type designed for general purpose, wide application |
| H7711-11 | Hamamatsu | Input voltage 11.5-15.5V; max input current7-25mA; compact side-on PMT photosensor module |
