Path:okDatasheet > Semiconductor Datasheet > IR Datasheet > IR-30

50 IRF720 ST300C08L3L SD103N10S20PC SD400N08MBC IRF7701 IRGBC20U ST1230C14K2L SD600R08PC 300HFR120P 302U40A SD453R20S20MC 305UA200P4 SD253R12S20MSV ST183C04CHK2L 307U120P3 SD203N08S15PC ST180S08P1L SD103R10S15MSC SD103N04S15MC SD203N10S20MBC 301UR250P4 SD203R20S10MSC 305UA200 ST1

IR datablad Catalog-30

Del nrTillverkareAnsökan
SD253R16S15PSV IRFast recovery diode
IRFP350 IRHEXFET power MOSFET. VDSS = 400 V, RDS(on) = 0.30 Ohm, ID = 16 A
IRF720 IRN-channel HEXFET, 400V, 3.3A
ST300C08L3L IRPhase control thyristor
SD103N10S20PC IRFast recovery diode
SD400N08MBC IRStandard recovery diode
IRF7701 IRHEXFET power MOSFET. VDSS = -12V, RDS(on) = 0.011 Ohm, ID = -10A @ VGS = -4.5V. RDS(on) = 0.015 Ohm, ID = -8.5A @ VGS = -2.5V. RDS(on) = 0.022 Ohm, ID = -7.0A @ VGS = -1.8V.
IRGBC20U IRInsulated gate bipolar transistor
ST1230C14K2L IRPhase control thyristor
SD600R08PC IRStandard recovery diode
300HFR120P IRStandard recovery diode
302U40A IRStandard recovery diode
SD453R20S20MC IRFast recovery diode
305UA200P4 IRStandard recovery diode
SD253R12S20MSV IRFast recovery diode
ST183C04CHK2L IRInverter grade thyristor
307U120P3 IRStandard recovery diode
SD203N08S15PC IRFast recovery diode
ST180S08P1L IRPhase control thyristor
SD103R10S15MSC IRFast recovery diode
SD103N04S15MC IRFast recovery diode
SD203N10S20MBC IRFast recovery diode
301UR250P4 IRStandard recovery diode
SD203R20S10MSC IRFast recovery diode
305UA200 IRStandard recovery diode
ST1900C50R1 IRPhase control thyristor
IRC630 IRHEXFET power MOSFET. Continuous drain current 9.0A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 200V. Drain-to-source on-resistance 0.40 Ohm
IRFI1010N IRHEXFET power MOSFET. VDSS =55V, RDS(on) = 0.012 Ohm, ID = 49 A
IRFIZ24V IRHEXFET power MOSFET. VDSS = 60V, RDS(on) = 0.060 Ohm, ID = 14A
SD600N08PTC IRStandard recovery diode

<< 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 >>