Path:okDatasheet > Semiconductor Datasheet > IR Datasheet > IR-6

ST173S10PFK2L 307UA250P5 ST223C04CHK0 SD103N04S10PBC SD103R14S20MSC IRU1010-25CS SD203N10S20PSC SD30OC32C 300UR40A IRGBC30S ST380CH04C3L 305U200 ST230C08C3L 301UA200 SD103N14S15MC ST330S14P0L IRF9Z14 70U160APD IRFU5410 IRG4BC20SD JANTXV2N6768 ST2100C36R1 ST303C12LHK2 IRU1015CT S

IR datablad Catalog-6

Del nrTillverkareAnsökan
IRF7457 IRHEXFET power MOSFET. VDSS = 20V, RDS(on) = 7.0 mOhm,, ID = 15A
IRU1206-33CD IR1A very low dropout positive fixed 3.3V regulator
ST173S10PFK2L IRInverter grade thyristor
307UA250P5 IRStandard recovery diode
ST223C04CHK0 IRInverter grade thyristor
SD103N04S10PBC IRFast recovery diode
SD103R14S20MSC IRFast recovery diode
IRU1010-25CS IR1A low dropout positive fixed 2.5V regulator
SD203N10S20PSC IRFast recovery diode
SD30OC32C IRStandard recovery diode
300UR40A IRStandard recovery diode
IRGBC30S IRInsulated gate bipolar transistor
ST380CH04C3L IRPhase control thyristor
305U200 IRStandard recovery diode
ST230C08C3L IRPhase control thyristor
301UA200 IRStandard recovery diode
SD103N14S15MC IRFast recovery diode
ST330S14P0L IRPhase control thyristor
IRF9Z14 IRHEXFET power MOSFET. VDSS = -60V, RDS(on) = 0.50 Ohm, ID = -6.7A
70U160APD IRStandard recovery diode
IRFU5410 IRHEXFET power MOSFET. VDSS = -100V, RDS(on) = 0.205 Ohm, ID = -13A
IRG4BC20SD IRInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.4V @ VGE = 15V, IC = 10A
JANTXV2N6768 IRHEXFET power mosfet
ST2100C36R1 IRPhase control thyristor
ST303C12LHK2 IRInverter grade thyristor
IRU1015CT IR1.5A low dropout positive adjustable regulator
SD253R12S15PV IRFast recovery diode
SD203N08S15PBC IRFast recovery diode
SD103R20S15PSC IRFast recovery diode
ST1230C14K2 IRPhase control thyristor

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