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IRG4BC10SD IRFU2407 ST3230C14R2 ST2100C34R3L ST303C04HK2L IRU1206-25CY SD600N12PSC SD263C36S50L IRFU2605 303URA200 IRF634NL SD250OC25K SD300R16MV 303URA120 307U200 SD253R16S20MSV SD253N12S20MV ST303S12MFN0L SD200R25MSC IRF5851 ST180C12C2L SD103R10S20PBC IRF3205S IRU1030CM SD150N1

IR datablad Catalog-66

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303UA160P3 IRStandard recovery diode
IRFI740G IRHEXFET power MOSFET. VDSS = 400V, RDS(on) = 0.55 Ohm, ID = 5.4 A
IRG4BC10SD IRInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A
IRFU2407 IRHEXFET power MOSFET. VDSS = 75V, RDS(on) = 0.026 Ohm, ID = 42A
ST3230C14R2 IRPhase control thyristor
ST2100C34R3L IRPhase control thyristor
ST303C04HK2L IRInverter grade thyristor
IRU1206-25CY IR1A very low dropout positive fixed 2.5V regulator
SD600N12PSC IRStandard recovery diode
SD263C36S50L IRFast recovery diode
IRFU2605 IRHEXFET power MOSFET
303URA200 IRStandard recovery diode
IRF634NL IRPower MOSFET, 250V, 8A
SD250OC25K IRStandard recovery diode
SD300R16MV IRStandard recovery diode
303URA120 IRStandard recovery diode
307U200 IRStandard recovery diode
SD253R16S20MSV IRFast recovery diode
SD253N12S20MV IRFast recovery diode
ST303S12MFN0L IRInverter grade thyristor
SD200R25MSC IRStandard recovery diode
IRF5851 IRHEXFET power MOSFET. VDSS = -20V, RDS(on) = 0.135 Ohm (P-Ch). VDSS = 20V, RDS(on) = 0.090 Ohm (N-Ch)
ST180C12C2L IRPhase control thyristor
SD103R10S20PBC IRFast recovery diode
IRF3205S IRHEXFET power MOSFET. VDSS = 55V, RDS(on) = 8.0 mOhm, ID = 110A
IRU1030CM IR3A low dropout positive adjustable regulator
SD150N12MC IRStandard recovery diode
SD400N20MSC IRStandard recovery diode
SD203N08S10MSC IRFast recovery diode
IRFIBC40GLC IRHEXFET power MOSFET. VDSS = 600V, RDS(on) = 1.2 Ohm, ID = 3.5 A

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