Path:OKDatasheet > Semiconductor Datasheet > IR Datasheet > IRC644
IRC644 specification: HEXFET power MOSFET. Continuous drain current 14A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 250V. Drain-to-source on-resistance 0.28 Ohm
IRC644 Liknande
- IRC630
- "HEXFET power MOSFET. Continuous drain current 9.0A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 200V. Drain-to-source on-resistance 0.40 Ohm"
- IRC630
- HEXFET power MOSFET. Continuous drain current 9.0A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 200V. Drain-to-source on-resistance 0.40 Ohm
- IRC640
- "HEXFET power MOSFET. Continuous drain current 18A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 200V. Drain-to-source on-resistance 0.18 Ohm"
- IRC644
- HEXFET power MOSFET. Continuous drain current 14A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 250V. Drain-to-source on-resistance 0.28 Ohm
IRC644 Datasheet och Spec
Tillverkare : IR
Packing : TO-220
Pins : 5
Temperature : Min -55 °C | Max 150 °C
Storlek : 247 KB
Ansökan : HEXFET power MOSFET. Continuous drain current 14A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 250V. Drain-to-source on-resistance 0.28 Ohm
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