Path:OKDatasheet > Semiconductor Datasheet > IR Datasheet > IRFB9N60A
IRFB9N60A specification: HEXFET power MOSFET. VDSS = 600V, RDS(on) = 0.75 Ohm, ID = 9.2A
Path:OKDatasheet > Semiconductor Datasheet > IR Datasheet > IRFB9N60A
IRFB9N60A specification: HEXFET power MOSFET. VDSS = 600V, RDS(on) = 0.75 Ohm, ID = 9.2A
Tillverkare : IR
Packing :
Pins : 3
Temperature : Min -55 °C | Max 150 °C
Storlek : 148 KB
Ansökan : HEXFET power MOSFET. VDSS = 600V, RDS(on) = 0.75 Ohm, ID = 9.2A