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6.0C 1.5KE150 MAX40-26.0CA MAX20-130.0CA SA90A 15KP75 20KW44A MAX20-26.0CA LCE12A MAX20-12.0C SMDJ160 SMDJ100A 20KW96A MDE-32D561K MDE-20D301K SMAJ170 1.5KE51 MDE-53D182K 15KW200 1.5KE47 SMCJ110A SA40A MDE-14D271K P6KE51A P6KE120 1.5KE62A P4KE27 3KP8.0

MDE Semiconductor datablad Catalog-23

Del nrTillverkareAnsökan
SMLJ16 MDE Semiconductor16.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
SAC10 MDE Semiconductor10.00V; 29.0A ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode
MAX40-26.0C MDE Semiconductor26.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications
1.5KE150 MDE Semiconductor121.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor for TVS modules and hybrid circuit applications
MAX40-26.0CA MDE Semiconductor26.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications
MAX20-130.0CA MDE Semiconductor130.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications
SA90A MDE Semiconductor90.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
15KP75 MDE Semiconductor75V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
20KW44A MDE Semiconductor44.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
MAX20-26.0CA MDE Semiconductor26.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications
LCE12A MDE Semiconductor12.00V; 1mA ;1500W peak pulse power; low capacitance transient voltage suppressor. Ideal for data line applications
MAX20-12.0C MDE Semiconductor12.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications
SMDJ160 MDE Semiconductor160.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
SMDJ100A MDE Semiconductor100.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
20KW96A MDE Semiconductor96.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
MDE-32D561K MDE Semiconductor560V; max peak current25000A; metal oxide varistor. High energy series 32mm single disc
MDE-20D301K MDE Semiconductor300V; max peak current10000A; metal oxide varistor. Standard D series 20mm disc
SMAJ170 MDE Semiconductor170.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
1.5KE51 MDE Semiconductor41.30V; 10mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor for TVS modules and hybrid circuit applications
MDE-53D182K MDE Semiconductor1800V; max peak current70000A; metal oxide varistor. High energy series 53mm single disc
15KW200 MDE Semiconductor200.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
1.5KE47 MDE Semiconductor38.10V; 10mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor for TVS modules and hybrid circuit applications
SMCJ110A MDE Semiconductor110.00V; 1mA ;1500W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
SA40A MDE Semiconductor40.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
MDE-14D271K MDE Semiconductor270V; max peak current6000A; metal oxide varistor. Standard D series 14mm disc
P6KE51A MDE Semiconductor43.60V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
P6KE120 MDE Semiconductor97.20V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
1.5KE62A MDE Semiconductor53.00V; 10mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor for TVS modules and hybrid circuit applications
P4KE27 MDE Semiconductor21.80V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
3KP8.0 MDE Semiconductor8.00V; 5mA ;3000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications

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