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E110A 1.5KE7.5A 1N6378 SA11A 5KP24A MAX20-10.0CA 30KW54 P6KE9.1A 1.5KE18 MAX20-16.0CA SMCJ33A MDE-40D112K MDE-34S271K MAX20-45.0C LCE8.5 SMCJ48A 1.5KE82A 30KW120 1.5KE36A MAX20-60.0C 1.5KE7.5A 1.5KE36A SA130 1.5KE120 P6KE12A SMLJ30A SMDJ24 15KP110

MDE Semiconductor datablad Catalog-40

Del nrTillverkareAnsökan
P6KE150A MDE Semiconductor128.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
SMCJ43A MDE Semiconductor43.00V; 1mA ;1500W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
P4KE110A MDE Semiconductor94.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
1.5KE7.5A MDE Semiconductor6.40V; 10mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor
1N6378 MDE Semiconductor18.00V; 50A ;1500W peak pulse power; glass passivated junction transient voltage suppressor
SA11A MDE Semiconductor11.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
5KP24A MDE Semiconductor24.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
MAX20-10.0CA MDE Semiconductor10.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications
30KW54 MDE Semiconductor54.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
P6KE9.1A MDE Semiconductor7.78V; 10mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
1.5KE18 MDE Semiconductor13.60V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor
MAX20-16.0CA MDE Semiconductor16.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications
SMCJ33A MDE Semiconductor33.00V; 1mA ;1500W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
MDE-40D112K MDE Semiconductor1100V; max peak current40000A; metal oxide varistor. High energy series 40mm single disc
MDE-34S271K MDE Semiconductor270V; max peak current40000A; Tmax=11; metal oxide varistor. High energy series 34mm single square
MAX20-45.0C MDE Semiconductor45.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications
LCE8.5 MDE Semiconductor8.50V; 1mA ;1500W peak pulse power; low capacitance transient voltage suppressor. Ideal for data line applications
SMCJ48A MDE Semiconductor48.00V; 1mA ;1500W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
1.5KE82A MDE Semiconductor70.10V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor
30KW120 MDE Semiconductor120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
1.5KE36A MDE Semiconductor30.80V; 10mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor for TVS modules and hybrid circuit applications
MAX20-60.0C MDE Semiconductor60.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications
1.5KE7.5A MDE Semiconductor6.40V; 10mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor for TVS modules and hybrid circuit applications
1.5KE36A MDE Semiconductor30.80V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor
SA130 MDE Semiconductor130.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
1.5KE120 MDE Semiconductor97.20V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor for TVS modules and hybrid circuit applications
P6KE12A MDE Semiconductor10.20V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
SMLJ30A MDE Semiconductor30.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
SMDJ24 MDE Semiconductor24.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
15KP110 MDE Semiconductor110V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor

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