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SMLJ22A 1.5KE62 P4KE20 SMLJ8.0 30KW90 SMAJ75A 30KW180 1N6384 3T230B SMLJ9.0 MDE-34S361K 3KP12A SMCJ90 SMAJ17A 1.5KE100A 15KW130 SMCJ5.0A SMDJ6.5A MAX40-43.0C P4KE130 MDE-53D911K SMDJ150A SMCJ16 LCE17A MDE-10D820K MDE-34S681K 5KP14 SA60A

MDE Semiconductor datablad Catalog-54

Del nrTillverkareAnsökan
SMAJ160 MDE Semiconductor160.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
MDE-20D180M MDE Semiconductor18V; max peak current3000A; metal oxide varistor. Standard D series 20mm disc
SMLJ22A MDE Semiconductor22.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
1.5KE62 MDE Semiconductor50.20V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor
P4KE20 MDE Semiconductor15.30V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
SMLJ8.0 MDE Semiconductor8.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
30KW90 MDE Semiconductor90.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
SMAJ75A MDE Semiconductor75.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
30KW180 MDE Semiconductor180.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
1N6384 MDE Semiconductor12.00V; 70A ;1500W peak pulse power; glass passivated junction transient voltage suppressor
3T230B MDE Semiconductor190V; 1A; surface mount and axial lead two terminal thyristor (3T) surge suppressor
SMLJ9.0 MDE Semiconductor9.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
MDE-34S361K MDE Semiconductor360V; max peak current40000A; Tmax=12; metal oxide varistor. High energy series 34mm single square
3KP12A MDE Semiconductor12.00V; 5mA ;3000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
SMCJ90 MDE Semiconductor90.00V; 1mA ;1500W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
SMAJ17A MDE Semiconductor17.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
1.5KE100A MDE Semiconductor85.50V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor for TVS modules and hybrid circuit applications
15KW130 MDE Semiconductor130.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
SMCJ5.0A MDE Semiconductor5.00V; 10mA ;1500W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
SMDJ6.5A MDE Semiconductor6.50V; 10mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
MAX40-43.0C MDE Semiconductor43.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications
P4KE130 MDE Semiconductor105.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
MDE-53D911K MDE Semiconductor910V; max peak current70000A; metal oxide varistor. High energy series 53mm single disc
SMDJ150A MDE Semiconductor150.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
SMCJ16 MDE Semiconductor16.00V; 1mA ;1500W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
LCE17A MDE Semiconductor17.00V; 1mA ;1500W peak pulse power; low capacitance transient voltage suppressor. Ideal for data line applications
MDE-10D820K MDE Semiconductor82V; max peak current3500A; metal oxide varistor. Standard D series 10mm disc
MDE-34S681K MDE Semiconductor680V; max peak current40000A; Tmax=13; metal oxide varistor. High energy series 34mm single square
5KP14 MDE Semiconductor14.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
SA60A MDE Semiconductor60.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications

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