Path:okDatasheet > Semiconductor Datasheet > MDE Semiconductor Datasheet > MDE Semiconductor-58

A 5KP100 MAX40-64.0CA SMAJ30 3KP8.5A SMLJ58 P4KE56 MAX20-14.0C 20KW180A 1.5KE7.5 MDE-40D391K 1.5KE250A 1.5KE8.2A SMAJ22 5KP7.0 1.5KE33A 5KP11 30KW108 MAX40-64.0C 5KP7.5A P4KE82A MDE-7D221M SMLJ43 MAX20-10.0C SMDJ7.5A 1.5KE10 SMLJ7.0 SA6.0A

MDE Semiconductor datablad Catalog-58

Del nrTillverkareAnsökan
SMDJ28A MDE Semiconductor28.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
SA45A MDE Semiconductor45.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
5KP100A MDE Semiconductor100.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
5KP100 MDE Semiconductor100.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
MAX40-64.0CA MDE Semiconductor64.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications
SMAJ30 MDE Semiconductor30.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
3KP8.5A MDE Semiconductor8.50V; 5mA ;3000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
SMLJ58 MDE Semiconductor58.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
P4KE56 MDE Semiconductor45.40V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
MAX20-14.0C MDE Semiconductor14.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications
20KW180A MDE Semiconductor180.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
1.5KE7.5 MDE Semiconductor6.05V; 10mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor for TVS modules and hybrid circuit applications
MDE-40D391K MDE Semiconductor390V; max peak current40000A; metal oxide varistor. High energy series 40mm single disc
1.5KE250A MDE Semiconductor214.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor
1.5KE8.2A MDE Semiconductor7.02V; 10mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor for TVS modules and hybrid circuit applications
SMAJ22 MDE Semiconductor22.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
5KP7.0 MDE Semiconductor7.00V; 50mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
1.5KE33A MDE Semiconductor28.20V; 10mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor for TVS modules and hybrid circuit applications
5KP11 MDE Semiconductor11.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
30KW108 MDE Semiconductor108.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
MAX40-64.0C MDE Semiconductor64.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications
5KP7.5A MDE Semiconductor7.50V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
P4KE82A MDE Semiconductor70.10V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
MDE-7D221M MDE Semiconductor220V; max peak current1750A; metal oxide varistor. Standard D series 7mm disc
SMLJ43 MDE Semiconductor43.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
MAX20-10.0C MDE Semiconductor10.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications
SMDJ7.5A MDE Semiconductor7.50V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
1.5KE10 MDE Semiconductor8.10V; 10mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor for TVS modules and hybrid circuit applications
SMLJ7.0 MDE Semiconductor7.00V; 10mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
SA6.0A MDE Semiconductor6.00V; 10mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications

<< 51 52 53 54 55 56 57 58 59 60 61