P4KE160A Liknande

  • P4KE10
    • 8.10V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
  • P4KE100
    • 81.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
  • P4KE100A
    • 85.50V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
  • P4KE10A
    • 8.55V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
  • P4KE11
    • 8.92V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
  • P4KE110
    • 89.20V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
  • P4KE110A
    • 94.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
  • P4KE11A
    • 9.40V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications

P4KE160A Datasheet och Spec

Tillverkare : MDE Semiconductor 

Packing :  

Pins : 2 

Temperature : Min -55 °C | Max 175 °C

Storlek : 928 KB

Ansökan : 136.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications 

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