1N5396 Liknande

  • 1N5348B
    • Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 11V, Izt = 125mA
  • 1N5349B
    • Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 12V, Izt = 100mA
  • 1N5350B
    • Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 13V, Izt = 100mA
  • 1N5351B
    • Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 14V, Izt = 100mA
  • 1N5351B
    • Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 14V, Izt = 100mA
  • 1N5352B
    • Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 15V, Izt = 75mA
  • 1N5354B
    • Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 17V, Izt = 70mA
  • 1N5355B
    • Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 18V, Izt = 65mA

1N5396 Datasheet och Spec

Tillverkare : PanJit 

Packing : D0-15 

Pins : 2 

Temperature : Min -55 °C | Max 150 °C

Storlek : 51 KB

Ansökan : Plastic silicon rectifier. Max reccurent peak reverse voltage 500V. Max average forward rectified current 1.5A. 

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