F1060 Liknande

  • F1060
    • 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F1063
    • 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F1065
    • 120 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F1066
    • 100 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F1069
    • 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1060 Datasheet och Spec

Tillverkare : Polyfet RF 

Packing :  

Pins : 2 

Temperature : Min -65 °C | Max 150 °C

Storlek : 41 KB

Ansökan : 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor 

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