F1535 specification: 35 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1535 Liknande

F1535
- 35 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1535 Datasheet och Spec

Tillverkare : Polyfet RF

Packing :

Pins : 4

Temperature : Min -65 °C | Max 150 °C

Storlek : 39 KB

Ansökan : 35 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor