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BUT11A specification: NPN silicon transistor. High voltage power switcing applications. Collector-base voltage 1000V. Collector-emitter voltage 450V. Emitter-base voltage 9V.
BUT11A Liknande
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- NPN silicon transistor. High voltage power switcing applications. Collector-base voltage 1000V. Collector-emitter voltage 450V. Emitter-base voltage 9V.
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BUT11A Datasheet och Spec
Tillverkare : WingShing
Packing : TO-220
Pins : 3
Temperature : Min 0 °C | Max 0 °C
Storlek : 24 KB
Ansökan : NPN silicon transistor. High voltage power switcing applications. Collector-base voltage 1000V. Collector-emitter voltage 450V. Emitter-base voltage 9V.
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