Path:okDatasheet > Semiconductor Datasheet > WingShing Datasheet > WingShing-3

MA4001 WMBT5401LT1 2SB834 WS82C55AP WMBTA92 2SD1878 2SB596 WS628128LLP-70 LS1240A KBPC1510 P600D SR170 2SC3281 KA3842AMN NE555N 2SD1879 MJ11013 MJE13005B 2SD820 2N3773 WMBTA42 KBPC35005 RL206 2SD1063 MJ10023 P600K SMA5819 BDX54C

WingShing datablad Catalog-3

Del nrTillverkareAnsökan
2SA1215 WingShingPNP planar silicon transistor. Audio power amplifier DC to DC converter.
KA2410 WingShingTelephone tone ringer. External triggering or ringer disables.
MELFSMA4001 WingShingSurface mount silicon rectifier. Max reccurent peak reverse voltage 50V. Max RMS voltage 35V. Max DC blocking voltage 50V
WMBT5401LT1 WingShingPNP silicon transistor. Collector-emitter voltage -150V. Collector-base voltage -160V. Emitter-base voltage -5.0V
2SB834 WingShingPNP epitaxial silicon transistor. Low frequency power amplifier
WS82C55AP WingShingCMOS programmable peripheral interface. Speed 8MHz
WMBTA92 WingShingNPN epitaxial silicon transistor. Power dissipation 225mW. Collector current(max) 500mA.
2SD1878 WingShingSilicon diffused power transistor.
2SB596 WingShingPNP epitaxial silicon transistor. Low frequency power amplifier.
WS628128LLP-70 WingShingVery low power/volpage CMOS SRAM. 128K x 8 bit. Vcc 4.4V-5.5V. Speed 70ns
LS1240A WingShingElectronic two-tone ringer.
KBPC1510 WingShingSingle-phase silicon bridge rectifier. Current 15A. Maximum recurrent peak reverse voltage 1000V. Maximum RMS voltage 700V. Maximum DC blocking voltage 1000V
P600D WingShingSilicon rectifier.Current 6.0A. Maximum recurrent peak reverse voltage 200V. Maximum RMS voltage 140V. Maximum DC blocking voltage 200V
SR170 WingShingSurface mount schottky barrier rectifier. Max reccurent peak reverse voltage 80V. Max RMS bridge input voltage 56V. Max DC blocking voltage 80V.
2SC3281 WingShingNPN planar silicon transistor. Audio power amplifier DC to DC converter
KA3842AMN WingShingLinear integrated circuit
NE555N WingShingPrecision timer
2SD1879 WingShingSilicon diffused power transistor.
MJ11013 WingShingPNP silicon darlington transistor. Switching regulators. PWM inverters. Solenoid and relay drivers
MJE13005B WingShingNPN silicon transistor. Electronic transformers, power switching circuit Vcbo=700V, Vceo=400V, Vebo=9V
2SD820 WingShingSilicon diffused power transistor.
2N3773 WingShingNPN planar silicon transistor. Audio power amplifier DC to DC converter
WMBTA42 WingShingNPN epitaxial silicon transistor. Power dissipation 225mW. Collector current(max) 500mA.
KBPC35005 WingShingSingle-phase silicon bridge rectifier. Current 35A. Maximum recurrent peak reverse voltage 50V. Maximum RMS bridge input voltage 35V. Maximum DC blocking voltage 50V
RL206 WingShingSilicon rectifier. Max reccurent peak reverse voltage 800V. Max RMS voltage 560V. Max DC blocking voltage 800V. Current 2.0A
2SD1063 WingShingNPN planar silicon transistor. PSW/D/DDC. Complementary to 2SB827
MJ10023 WingShingSilicon NPN power darlington transistor.
P600K WingShingSilicon rectifier.Current 6.0A. Maximum recurrent peak reverse voltage 800V. Maximum RMS voltage 560V. Maximum DC blocking voltage 800V
SMA5819 WingShingSurface mount schottky barrier rectifier. Max reccurent peak reverse voltage 40V. Max RMS bridge input voltage 28V. Max DC blocking voltage 40V.
BDX54C WingShingPNP epitaxial silicon transistor. Collector-base voltage -100V. Collector-emitter voltage -100V. Emitter-base voltage -5V

1 2 3 4 5 6 7 8 9 10 11 12 13 14