Path:okDatasheet > Semiconductor Datasheet > IR Datasheet > IR-35
1L PVAZ172NS JANTX2N6790 IRFI064 IRFPS3810 JANTXV2N6792 70UFR160YPD ST303S08MFN1 48L160D MBRS360TR 307UA160P2 IRF520VL ST780C06L2L ST1200C14K2L IRHM7064 SD453R16S30MTC JANTX2N6766 IRG4PH30KD SD453N12S30PTC ST730C16L3L IRHM9064 ST280S04P1V SD500OC26R ST330C12L1 CPU165MU 307UA200P3
| Del nr | Tillverkare | Ansökan |
|---|---|---|
| IRF630NL | IR | Power MOSFET, 200V, 9.3A |
| ST203C12CHH1L | IR | Inverter grade thyristor |
| PVAZ172NS | IR | HEXFET power mosfet photovoltaic relay |
| JANTX2N6790 | IR | HEXFET power mosfet |
| IRFI064 | IR | HEXFET transistror. BVDSS = 60V, RDS(on) = 0.017 Ohm, ID = 45 A |
| IRFPS3810 | IR | HEXFET power MOSFET. VDSS = 100 V, RDS(on) = 0.009 Ohm, ID = 170 A |
| JANTXV2N6792 | IR | HEXFET power mosfet |
| 70UFR160YPD | IR | Standard recovery diode |
| ST303S08MFN1 | IR | Inverter grade thyristor |
| 48L160D | IR | Standard recovery diode |
| MBRS360TR | IR | Schottky power rectifier, 60V, 3A |
| 307UA160P2 | IR | Standard recovery diode |
| IRF520VL | IR | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.165 Ohm, ID = 9.6A |
| ST780C06L2L | IR | Phase control thyristor |
| ST1200C14K2L | IR | Phase control thyristor |
| IRHM7064 | IR | HEXFET transistor |
| SD453R16S30MTC | IR | Fast recovery diode |
| JANTX2N6766 | IR | HEXFET power mosfet |
| IRG4PH30KD | IR | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 1200V, VCE(on)typ. = 3.10V @ VGE = 15V, IC = 10A |
| SD453N12S30PTC | IR | Fast recovery diode |
| ST730C16L3L | IR | Phase control thyristor |
| IRHM9064 | IR | HEXFET transistor |
| ST280S04P1V | IR | Phase control thyristor |
| SD500OC26R | IR | Standard recovery diode |
| ST330C12L1 | IR | Phase control thyristor |
| CPU165MU | IR | IGBT SIP module |
| 307UA200P3 | IR | Standard recovery diode |
| SD600R20PTC | IR | Standard recovery diode |
| IRGBF20F | IR | Insulated gate bipolar transistor |
| SD153R08S15PSV | IR | Fast recovery diode |