Path:okDatasheet > Semiconductor Datasheet > JGD Datasheet > JGD-107
BJ5942 3EZ56D3 1N982D SR260 3EZ14D10 BY397 3EZ6.8D5 P6KE68A SMAJ78A HA14G SMBJ5953B 3EZ5.1D2 ZMM5257D 1N5916 1N5546 1N4112D SF11LG SMAJ26C P4KE200C 3EZ180D4 P6KE27 P6KE20CA 3EZ39D4 3EZ39D3 P6KE200C 1W02G 1N4728D ZMM5258C
Del nr | Tillverkare | Ansökan |
---|---|---|
SMAJ120CA | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 120 V. Bidirectional. |
3EZ17D3 | JGD | 3 W, silicon zener diode. Nominal voltage 17 V, current 44 mA, +-3% tolerance. |
SMBJ5942 | JGD | 1.5W silicon surface mount zener diode. Zener voltage 51 V. Test current 7.3 mA. +-20% tolerance. |
3EZ56D3 | JGD | 3 W, silicon zener diode. Nominal voltage 56 V, current 13 mA, +-3% tolerance. |
1N982D | JGD | 0.5W, silicon zener diode. Zener voltage 75V. Test current 1.7mA. +-1% tolerance. |
SR260 | JGD | Schottky barrier rectifier. Max recurrent peak reverse voltage 60 V. Max average forward current 2.0 A. |
3EZ14D10 | JGD | 3 W, silicon zener diode. Nominal voltage 14 V, current 53 mA, +-10% tolerance. |
BY397 | JGD | 3.0A, fast recovery rectifier. Max recurrent peak reverse voltage 200V. |
3EZ6.8D5 | JGD | 3 W, silicon zener diode. Nominal voltage 6.8 V, current 110 mA, +-5% tolerance. |
P6KE68A | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 68 V. |
SMAJ78A | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 78 V. |
HA14G | JGD | 1.0A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 300V. |
SMBJ5953B | JGD | 1.5W silicon surface mount zener diode. Zener voltage 150 V. Test current 2.5 mA. +-5% tolerance. |
3EZ5.1D2 | JGD | 3 W, silicon zener diode. Nominal voltage 5.1 V, current 147 mA, +-2% tolerance. |
ZMM5257D | JGD | Surface mount zener diode. Nominal zener voltage 33 V. Test current 3.8 mA. +-20% tolerance. |
1N5916 | JGD | 1.5 W, silicon zener diode. Zener voltage 4.3V. Test current 87.2 mA. +-20% tolerance. |
1N5546 | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 33.0 V. Test current 1.0 mAdc. +-20% tolerance. |
1N4112D | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 18V. 1% tolerance. |
SF11LG | JGD | Glass passivated super fast rectifier. Max recurrent peak reverse voltage 50 V. Max average forward current 1.0 A. |
SMAJ26C | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 26 V. Bidirectional. |
P4KE200C | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 200 V. Bidirectional. |
3EZ180D4 | JGD | 3 W, silicon zener diode. Nominal voltage 180 V, current 4.2 mA, +-4% tolerance. |
P6KE27 | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 27 V. |
P6KE20CA | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 20 V. Bidirectional. |
3EZ39D4 | JGD | 3 W, silicon zener diode. Nominal voltage 39 V, current 19 mA, +-4% tolerance. |
3EZ39D3 | JGD | 3 W, silicon zener diode. Nominal voltage 39 V, current 19 mA, +-3% tolerance. |
P6KE200C | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 200 V. Bidirectional. |
1W02G | JGD | Single phase 1.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 200 V. |
1N4728D | JGD | 1W zener diode. Nominal zener voltage 3.3V. 1% tolerance. |
ZMM5258C | JGD | Surface mount zener diode. Nominal zener voltage 36 V. Test current 3.4 mA. +-10% tolerance. |