Path:okDatasheet > Semiconductor Datasheet > MDE Semiconductor Datasheet > MDE Semiconductor-5
1K 3KP17 MDE-10D180M 15KW36A SMCJ75 MAX20-45.0CA 3KP10 MAX20-36.0C MDE-34S112K MDE-7D391M 15KW64A MAX20-9.0CA 1.5KE160 1.5KE10A 1.5KE11 5KP26A 15KP78A SMBJ58 20KW28A MDE-32D821K 3T080A 3KP24 1.5KE350 1.5KE400A 30KW60A SMAJ8.5A ICTE-18 SMBJ15A 1.5KE120A
Del nr | Tillverkare | Ansökan |
---|---|---|
MAX20-6.0C | MDE Semiconductor | 6.00V; 50mA ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE-14D201K | MDE Semiconductor | 200V; max peak current6000A; metal oxide varistor. Standard D series 14mm disc |
3KP17 | MDE Semiconductor | 17.00V; 5mA ;3000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE-10D180M | MDE Semiconductor | 18V; max peak current1000A; metal oxide varistor. Standard D series 10mm disc |
15KW36A | MDE Semiconductor | 36.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
SMCJ75 | MDE Semiconductor | 75.00V; 1mA ;1500W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MAX20-45.0CA | MDE Semiconductor | 45.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
3KP10 | MDE Semiconductor | 10.00V; 5mA ;3000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MAX20-36.0C | MDE Semiconductor | 36.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE-34S112K | MDE Semiconductor | 1100V; max peak current40000A; Tmax=13; metal oxide varistor. High energy series 34mm single square |
MDE-7D391M | MDE Semiconductor | 390V; max peak current1750A; metal oxide varistor. Standard D series 7mm disc |
15KW64A | MDE Semiconductor | 64.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MAX20-9.0CA | MDE Semiconductor | 9.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
1.5KE160 | MDE Semiconductor | 130.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
1.5KE10A | MDE Semiconductor | 8.55V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
1.5KE11 | MDE Semiconductor | 8.92V; 10mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor for TVS modules and hybrid circuit applications |
5KP26A | MDE Semiconductor | 26.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
15KP78A | MDE Semiconductor | 78V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
SMBJ58 | MDE Semiconductor | 58.00V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
20KW28A | MDE Semiconductor | 28.00V; 50mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE-32D821K | MDE Semiconductor | 820V; max peak current25000A; metal oxide varistor. High energy series 32mm single disc |
3T080A | MDE Semiconductor | 75V; 1A; surface mount and axial lead two terminal thyristor (3T) surge suppressor |
3KP24 | MDE Semiconductor | 24.00V; 5mA ;3000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
1.5KE350 | MDE Semiconductor | 284.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor for TVS modules and hybrid circuit applications |
1.5KE400A | MDE Semiconductor | 342.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor for TVS modules and hybrid circuit applications |
30KW60A | MDE Semiconductor | 60.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
SMAJ8.5A | MDE Semiconductor | 8.50V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
ICTE-18 | MDE Semiconductor | 18.00V; 50A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
SMBJ15A | MDE Semiconductor | 15.00V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
1.5KE120A | MDE Semiconductor | 102.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor for TVS modules and hybrid circuit applications |