Path:OKDatasheet > Semiconductor Datasheet > ADI Datasheet > AD645JN
AD645JN specification: 18V; 500-750mW; low noise, low drift FET operational amplifier. For low noise photodiode preamps, CT scanners, precision I-V converters
Path:OKDatasheet > Semiconductor Datasheet > ADI Datasheet > AD645JN
AD645JN specification: 18V; 500-750mW; low noise, low drift FET operational amplifier. For low noise photodiode preamps, CT scanners, precision I-V converters
Tillverkare : ADI
Packing : DIP
Pins : 8
Temperature : Min 0 °C | Max 70 °C
Storlek : 489 KB
Ansökan : 18V; 500-750mW; low noise, low drift FET operational amplifier. For low noise photodiode preamps, CT scanners, precision I-V converters