Path:OKDatasheet > Semiconductor Datasheet > Alliance Datasheet > AS4LC2M8S1-10TC
AS4LC2M8S1-10TC specification: 3.3V 2M x 8 CMOS synchronous DRAM, 1/frequency - 10 ns
AS4LC2M8S1-10TC Liknande
- AS4LC1M16E5-50JI
- 3V 1M x 16 CM0S DRAM (EDO), 50ns RAS access time
- AS4LC1M16E5-50TC
- 3V 1M x 16 CM0S DRAM (EDO), 50ns RAS access time
- AS4LC1M16E5-50TC
- 3V 1M x 16 CM0S DRAM (EDO), 50ns RAS access time
- AS4LC1M16E5-50TI
- 3V 1M x 16 CM0S DRAM (EDO), 50ns RAS access time
- AS4LC1M16E5-50TI
- 3V 1M x 16 CM0S DRAM (EDO), 50ns RAS access time
- AS4LC1M16E5-50TI
- 3V 1M x 16 CM0S DRAM (EDO), 50ns RAS access time
- AS4LC1M16E5-60JC
- 3V 1M x 16 CM0S DRAM (EDO), 60ns RAS access time
- AS4LC1M16E5-60JI
- 3V 1M x 16 CM0S DRAM (EDO), 60ns RAS access time
AS4LC2M8S1-10TC Datasheet och Spec
Tillverkare : Alliance
Packing : TSOPII
Pins : 46
Temperature : Min 0 °C | Max 70 °C
Storlek : 783 KB
Ansökan : 3.3V 2M x 8 CMOS synchronous DRAM, 1/frequency - 10 ns
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