X3N173 specification: 30 V, diode protected P-Channel enhancement mode MOSFET general purpose amplifier/switch

X3N173 Liknande

X3N163
- 40 V, P-Channel enhancement mode JFET general purpose amplifier switch
X3N164
- 40 V, P-Channel enhancement mode JFET general purpose amplifier switch
X3N165
- 40 V, monolithic dual P-Channel enhancement mode JFET general purpose amplifier
X3N166
- 40 V, monolithic dual P-Channel enhancement mode JFET general purpose amplifier
X3N170
- 25 V, N-Channel enhancement mode MOSFET switch
X3N171
- 25 V, N-Channel enhancement mode MOSFET switch
X3N172
- 40 V, diode protected P-Channel enhancement mode MOSFET general purpose amplifier/switch
X3N173
- 30 V, diode protected P-Channel enhancement mode MOSFET general purpose amplifier/switch

X3N173 Datasheet och Spec

Tillverkare : Calogic

Packing : SMD

Pins : 4

Temperature : Min -55 °C | Max 150 °C

Storlek : 36 KB

Ansökan : 30 V, diode protected P-Channel enhancement mode MOSFET general purpose amplifier/switch