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1N4737 specification: 1W silicon planar zener diode. Nominal zener voltage Vz = 7.5 V. Test current Izt = 34 mA.
1N4737 Liknande
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- 1W silicon planar zener diode. Nominal zener voltage Vz = 5.1 V. Test current Izt = 49 mA.
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- 1W silicon planar zener diode. Nominal zener voltage Vz = 20 V. Test current Izt = 12.5 mA.
- 1N4754
- 1W silicon planar zener diode. Nominal zener voltage Vz = 39 V. Test current Izt = 6.5 mA.
- 1N4728
- 1W silicon planar zener diode. Nominal zener voltage Vz = 3.3 V. Test current Izt = 76 mA.
- 1N4755
- 1W silicon planar zener diode. Nominal zener voltage Vz = 43 V. Test current Izt = 6.0 mA.
- 1N4739
- 1W silicon planar zener diode. Nominal zener voltage Vz = 9.1 V. Test current Izt = 28 mA.
- 1N4762
- 1W silicon planar zener diode. Nominal zener voltage Vz = 82 V. Test current Izt = 3.0 mA.
- 1N4758
- 1W silicon planar zener diode. Nominal zener voltage Vz = 56 V. Test current Izt = 4.5 mA.
1N4737 Datasheet och Spec
Tillverkare : Chenyi Electronics
Packing :
Pins : 2
Temperature : Min -65 °C | Max 175 °C
Storlek : 60 KB
Ansökan : 1W silicon planar zener diode. Nominal zener voltage Vz = 7.5 V. Test current Izt = 34 mA.
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