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W6NRE0X-0000 Diameter 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
W4TXE0X-0D00 Diameter 76.2mm; lsemi-insulating (prototype); silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
W4NRE0X-0D00 Diameter 76.2mm; standard micropipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
C505-XB290-E1000-A 11.0mW; colorgreen; 3.8-4.0V; Xbright InGaN LED
C470-XB900-A 150mW; colorblue; 3.7-4.0V; Xbright InGaN LED
W6NXD0K-0000 Diameter 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
W6NXD3J-0000 Diameter 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
CSD10120D 1200V; 5A; zero recovery rectifier. For switch mode power supplies, power factor correction, motor control
CSD04060E 600V; 4A; zero recovery rectifier. For switch mode power supplies, power factor correction, motor control
W4NXE4C-LD00 Diameter 76.2mm; low micropipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
CSD01060A 600V; 1A; zero recovery rectifier. For switch mode power supplies, power factor correction, motor control
C525-CB230-E1000 0.650W; colorgreen; 3.7V; low current InGaN LED
C490-CB290-E1000 2.5mW; coloraqua blue; 3.3-3.7V; super bright InGaN LED
W4TRD0R-0D00 Diameter 50.8mm; semi-insulating; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
C527-MB290-E1000 7.0mW; colorgreen; 3.7-4.0V; mega bright InGaN LED
W4NXE4C-SD00 Diameter 76.2mm; select micropipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
CRF-22010-001 62.5mW; 120VDC; SiC RF power MESFET. For class A,AB amplifiers; TDMA, EDGE, CDMA, W-CDMA, broadband amplifiers, CATV amplifiers, MMDS
C405-XB900-A 250mW; colorblue; 3.7-4.0V; Xbright InGaN LED
C460-XB290-E1000-A 15.0mW; colordeep blue; 3.7-4.0V; Xbright InGaN LED
W4NRD8C-U000 Diameter 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
CSD20060D 600V; 20A; zero recovery rectifier. For switch mode power supplies, power factor correction, motor control, snubber
C460-UB290-E1000 5.5mW; colordeep blue; 3.5-3.9V; ultra bright InGaN LED
CXXX-MB290-S0100 5V; 30mA; super bright LED. For outdoor LED video displays, automative dashboard lighting, white LEDs, backlighting
C503-MB290-E1000 8.0mW; colorgreen; 3.7-4.0V; mega bright InGaN LED
W4NXE8C-SD00 Diameter 76.2mm; select micropipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
C470-XB290-E1000-A 14.0mW; colorblue; 3.7-4.0V; Xbright InGaN LED
C470-MB290-E1000 10.0mW; colorblue; 3.7-4.0V; mega bright InGaN LED
W4NXE8C-LD00 Diameter 76.2mm; low micropipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition

Cree profil

Cree, Inc is a market and technology leader in LED chips, power LEDs, LEDs for backlighting, power switching and wireless communications devices.

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