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W4NRD8C-U000 specification: Diameter 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition

W4NRD8C-U000 Liknande

  • W4NRD8C-U000
    • Diameter 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
  • W4NRE0X-0D00
    • Diameter 76.2mm; standard micropipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition

W4NRD8C-U000 Datasheet och Spec

Tillverkare : Cree 

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Temperature : Min 0 °C | Max 0 °C

Storlek : 306 KB

Ansökan : Diameter 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition 

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