Path:OKDatasheet > Semiconductor Datasheet > EIC Datasheet > 1N5819G
1N5819G specification: 40 V, 1.0 A schottky barrier rectifier diode
1N5819G Liknande
- 1N5817G
- 20 V, 1.0 A schottky barrier rectifier diode
- 1N5818G
- 30 V, 1.0 A schottky barrier rectifier diode
- 1N5819G
- 40 V, 1.0 A schottky barrier rectifier diode
- 1N5820
- 20 V, 3.0 A schottky barrier rectifier diode
- 1N5820S
- 20 V, 3.0 A schottky barrier rectifier diode
- 1N5821
- 30 V, 3.0 A schottky barrier rectifier diode
- 1N5821S
- "30 V, 3.0 A schottky barrier rectifier diode"
- 1N5822
- 40 V, 3.0 A schottky barrier rectifier diode
1N5819G Datasheet och Spec
Tillverkare : EIC
Packing :
Pins : 2
Temperature : Min -65 °C | Max 150 °C
Storlek : 17 KB
Ansökan : 40 V, 1.0 A schottky barrier rectifier diode
1N5819G PDF Ladda ner