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ISL9N306AD3ST specification: N-Channel Logic Level PWM Optimized UltraFET R Trench Power MOSFETs 30V, 50A, 6mOhm
ISL9N306AD3ST Liknande
- ISL9K1560G3
- 15A, 600V Stealth TM Dual Diode
- ISL9K18120G3
- 18A, 1200V Stealth Dual Diode
- ISL9K30120G3
- 30A, 1200V Stealth Dual Diode
- ISL9K3060G3
- 30A, 600V Stealth Dual Diode
- ISL9K460P3
- 4A,600V Stealth Dual Diode
- ISL9K460P3
- 4A,600V Stealth Dual Diode
- ISL9K8120P3
- 8A, 1200V Stealth Dual Diode
- ISL9N303AP3
- N-Channel Logic Level UltraFETR Trench MOSFETs 30V, 75A, 3.2mOhm
ISL9N306AD3ST Datasheet och Spec
Tillverkare : Fairchild
Packing :
Pins : 0
Temperature : Min 0 °C | Max 0 °C
Storlek : 279 KB
Ansökan : N-Channel Logic Level PWM Optimized UltraFET R Trench Power MOSFETs 30V, 50A, 6mOhm
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