NDB603AL specification: N-channel logic level enhancement mode field effect transistor, 30V, 25A

NDB603AL Liknande

NDB6020P
- P-Channel Logic Level Enhancement Mode Field Effect Transistor
NDB6030L
- Length/Height 4.69 mm Width 10.54 mm Depth 15.49 mm Power dissipation 75 W Transistor polarity N Channel Current Id cont. 52 A Voltage Vgs th max. 3 V (D2-Pak) Voltage Vds max 30 V
NDB603AL
- N-channel logic level enhancement mode field effect transistor, 30V, 25A
NDB6051
- Length/Height 4.69 mm Width 10.54 mm Depth 15.49 mm Power dissipation 100 W Transistor polarity N Channel Current Id cont. 48 A Voltage Vgs th max. 4 V (D2-Pak) Voltage Vds max 50 V
NDB6060L
- Length/Height 4.69 mm Width 10.54 mm Depth 15.49 mm Power dissipation 100 W Transistor polarity N Channel Current Id cont. 48 A Voltage Vgs th max. 2 V (D2-Pak) Voltage Vds max 60 V

NDB603AL Datasheet och Spec

Tillverkare : Fairchild

Packing : TO-263AB

Pins : 3

Temperature : Min -65 °C | Max 175 °C

Storlek : 71 KB

Ansökan : N-channel logic level enhancement mode field effect transistor, 30V, 25A