GS8170DW36C-300 specification: 300MHz 512K x 36 18MB double late write sigmaRAM SRAM

GS8170DW36C-300 Liknande

GS8160Z18T-225I
- 6ns 225MHz 1M x 18 18MB pipelined and flow through synchronous NBT SRAM
GS8180D18D-333
- 333MHz 1M x 18 18MB sigmaQuad SRAM
GS8170LW72C-333
- 333MHz 256K x 72 18MB double late write sigmaRAM SRAM
GS816036T-225
- 6ns 225MHz 512K x 36 18Mb synchronous burst SRAM
GS818DV18D-333
- 333MHz 1M x 18 18MB sigmaQuad SRAM
GS8160F36T-8.5
- 8.5ns 512K x 36 18MB synchronous burst SRAM
GS816037T-200
- 200MHz 512K x 36 synchronous SRAM
GS8160E36T-200
- 6.5ns 200MHz 512K x 36 synchronous burst SRAM

GS8170DW36C-300 Datasheet och Spec

Tillverkare : GSI

Packing : BGA

Pins : 209

Temperature : Min -40 °C | Max 85 °C

Storlek : 996 KB

Ansökan : 300MHz 512K x 36 18MB double late write sigmaRAM SRAM