Path:OKDatasheet > Semiconductor Datasheet > HYNIX Datasheet > HY51VS18163HGLJ-6
HY51VS18163HGLJ-6 specification: Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns, low power
HY51VS18163HGLJ-6 Liknande
- HY51V17403HGJ-6
- 4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns
- HY51V17403HGLJ-6
- 4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns, low power
- HY51V17403HGLJ-7
- 4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns, low power
- HY51V17403HGLT-6
- 4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns, low power
- HY51V17403HGLT-7
- 4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns, low power
- HY51V17403HGT-6
- 4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns
- HY51V17403HGT-7
- 4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns
- HY51V18163HGJ-7
- Dynamic RAM organized 1,048,576 words x 16bit, 70ns
HY51VS18163HGLJ-6 Datasheet och Spec
Tillverkare : HYNIX
Packing : SOJ
Pins : 42
Temperature : Min 0 °C | Max 70 °C
Storlek : 117 KB
Ansökan : Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns, low power
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