P6606-110 specification: Active area 1x1mm; 0.2mW; InSb photoconductive detector thermoelectrically cooled detector capable of long-term measurements

P6606-110 Liknande

P6606-110
- Active area 1x1mm; 0.2mW; InSb photoconductive detector thermoelectrically cooled detector capable of long-term measurements
P6606-210
- Active area 1x1mm; 0.2mW; InSb photoconductive detector thermoelectrically cooled detector capable of long-term measurements
P6606-310
- Active area 1x1mm; 0.2mW; InSb photoconductive detector thermoelectrically cooled detector capable of long-term measurements
P6606-320
- Active area 2x2mm; 0.2mW; InSb photoconductive detector thermoelectrically cooled detector capable of long-term measurements

P6606-110 Datasheet och Spec

Tillverkare : Hamamatsu

Packing : TO-8

Pins : 6

Temperature : Min -40 °C | Max 60 °C

Storlek : 170 KB

Ansökan : Active area 1x1mm; 0.2mW; InSb photoconductive detector thermoelectrically cooled detector capable of long-term measurements