HM62V256LTM-10 specification: 32,768-word x 8-bit low voltage operation CMOS static RAM, 100ns

HM62V256LTM-10 Liknande

HM621400HCJP-10
- 4M High speed SRAM (4-Mword x 1-bit)
HM621400HCLJP-10
- 4M High speed SRAM (4-Mword x 1-bit)
HM621400HJP-10
- 4M high speed SRAM (4-Mword x 1-bit), 10ns access time
HM621400HJP-12
- 4M high speed SRAM (4-Mword x 1-bit), 12ns access time
HM621400HJP-15
- 4M high speed SRAM (4-Mword x 1-bit), 15ns access time
HM621400HLJP-10
- 4M high speed SRAM (4-Mword x 1-bit), 10ns access time
HM621400HLJP-12
- 4M high speed SRAM (4-Mword x 1-bit), 12ns access time
HM6216255HCJP-10
- 4M High speed SRAM (256-kword x 16-bit)

HM62V256LTM-10 Datasheet och Spec

Tillverkare : Hitachi

Packing : TSOP

Pins : 28

Temperature : Min 0 °C | Max 70 °C

Storlek : 122 KB

Ansökan : 32,768-word x 8-bit low voltage operation CMOS static RAM, 100ns