Path:OKDatasheet > Semiconductor Datasheet > ICSI Datasheet > IC61SF25636D-8.5TQ
IC61SF25636D-8.5TQ specification: 8.5ns; 2.5-3.3V; 256K x 36; 8Mb SYNCBURST flow through static RAM
IC61SF25636D-8.5TQ Liknande
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- 117MHz; 3.3V; 128K x 36 synchronous pipelined static RAM
- IC61LV12816-12T
- 12ns; 3.3V; 128K x 16 high-speed CMOS static RAM
- IC61S6432-133TQ
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- IC61SF25632T-9.5TQ
- 9.5ns; 2.5-3.3V; 256K x 32; 8Mb SYNCBURST flow through static RAM
- IC61C256AH-12J
- 12ns; 5V; 32K x 8; high-speed CMOS static RAM
- IC61LV12816-12TI
- 12ns; 3.3V; 128K x 16 high-speed CMOS static RAM
- IC61LV2568-12KI
- 12ns; 3.3V; 256K x 16 high-speed CMOS static RAM
- IC61SF12832-8.5TQI
- 8.5ns; 3.3V; 128K x 32 synchronous flow-through static RAM
IC61SF25636D-8.5TQ Datasheet och Spec
Tillverkare : ICSI
Packing : TQFP
Pins : 100
Temperature : Min 0 °C | Max 70 °C
Storlek : 526 KB
Ansökan : 8.5ns; 2.5-3.3V; 256K x 36; 8Mb SYNCBURST flow through static RAM
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