Path:OKDatasheet > Semiconductor Datasheet > IR Datasheet > IRC530
IRC530 specification: HEXFET power MOSFET. Continuous drain current 14A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 100V.
Path:OKDatasheet > Semiconductor Datasheet > IR Datasheet > IRC530
IRC530 specification: HEXFET power MOSFET. Continuous drain current 14A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 100V.
Tillverkare : IR
Packing : TO-220
Pins : 5
Temperature : Min -55 °C | Max 175 °C
Storlek : 248 KB
Ansökan : HEXFET power MOSFET. Continuous drain current 14A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 100V.