IRF3315S specification: HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.082 Ohm, ID = 21A

IRF3315S Liknande

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- HEXFET power MOSFET. VDSS = 55V, RDS(on) = 8.0 mOhm, ID = 110A
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- Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS =400V, RDS(on) = 1.0 Ohm, ID = 5.5A
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- HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.07 Ohm, ID = 27A
IRF3315L
- HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.082 Ohm, ID = 21A
IRF3315L
- HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.082 Ohm, ID = 21A

IRF3315S Datasheet och Spec

Tillverkare : IR

Packing : DDPak

Pins : 3

Temperature : Min -55 °C | Max 175 °C

Storlek : 216 KB

Ansökan : HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.082 Ohm, ID = 21A