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IRF5210S specification: HEXFET power MOSFET. VDSS = -100V, RDS(on) = 0.06 Ohm, ID = -40A
IRF5210S Liknande
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- IRF5210
- HEXFET power MOSFET. VDSS = -100V, RDS(on) = 0.06 Ohm, ID = -40A
IRF5210S Datasheet och Spec
Tillverkare : IR
Packing : DDPak
Pins : 3
Temperature : Min -55 °C | Max 175 °C
Storlek : 204 KB
Ansökan : HEXFET power MOSFET. VDSS = -100V, RDS(on) = 0.06 Ohm, ID = -40A
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