Path:OKDatasheet > Semiconductor Datasheet > IR Datasheet > IRF5801
IRF5801 specification: HEXFET power MOSFET. VDSS = 200V, RDS(on) = 2.2 Ohm, ID = 0.6A
IRF5801 Liknande
- IRF510
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54 Ohm, ID = 5.6A
- IRF510S
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54 Ohm, ID = 5.6A
- IRF520N
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.20 Ohm, ID = 9.7A
- IRF520NL
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.20 Ohm, ID = 9.7A
- IRF520NS
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.20 Ohm, ID = 9.7A
- IRF520VL
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.165 Ohm, ID = 9.6A
- IRF520VS
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.165 Ohm, ID = 9.6A
- IRF5210
- HEXFET power MOSFET. VDSS = -100V, RDS(on) = 0.06 Ohm, ID = -40A
IRF5801 Datasheet och Spec
Tillverkare : IR
Packing : TSOP
Pins : 6
Temperature : Min -55 °C | Max 150 °C
Storlek : 131 KB
Ansökan : HEXFET power MOSFET. VDSS = 200V, RDS(on) = 2.2 Ohm, ID = 0.6A
IRF5801 PDF Ladda ner