Path:OKDatasheet > Semiconductor Datasheet > IR Datasheet > IRF5810
IRF5810 specification: HEXFET power MOSFET. VDSS = -20V, RDS(on) = 90 mOhm, ID = -2.9A @ VGS = -4.5V, RDS(on) = 135 mOhm, ID = -2.3A @ VGS = -2.5V
Path:OKDatasheet > Semiconductor Datasheet > IR Datasheet > IRF5810
IRF5810 specification: HEXFET power MOSFET. VDSS = -20V, RDS(on) = 90 mOhm, ID = -2.9A @ VGS = -4.5V, RDS(on) = 135 mOhm, ID = -2.3A @ VGS = -2.5V
Tillverkare : IR
Packing : TSOP
Pins : 6
Temperature : Min -55 °C | Max 150 °C
Storlek : 228 KB
Ansökan : HEXFET power MOSFET. VDSS = -20V, RDS(on) = 90 mOhm, ID = -2.9A @ VGS = -4.5V, RDS(on) = 135 mOhm, ID = -2.3A @ VGS = -2.5V