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IRF5852 specification: HEXFET power MOSFET. VDSS = 20V, RDS(on) = 0.090 Ohm, ID = 2.7A @ VGS = 4.5V, RDS(on) = 0.120 Ohm, ID = 2.2A @ VGS = 2.5V
IRF5852 Liknande
- IRF510
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54 Ohm, ID = 5.6A
- IRF510S
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54 Ohm, ID = 5.6A
- IRF520N
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.20 Ohm, ID = 9.7A
- IRF520NL
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.20 Ohm, ID = 9.7A
- IRF520NS
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.20 Ohm, ID = 9.7A
- IRF520VL
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- IRF520VS
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- IRF5210
- HEXFET power MOSFET. VDSS = -100V, RDS(on) = 0.06 Ohm, ID = -40A
IRF5852 Datasheet och Spec
Tillverkare : IR
Packing : TSOP
Pins : 6
Temperature : Min -55 °C | Max 150 °C
Storlek : 262 KB
Ansökan : HEXFET power MOSFET. VDSS = 20V, RDS(on) = 0.090 Ohm, ID = 2.7A @ VGS = 4.5V, RDS(on) = 0.120 Ohm, ID = 2.2A @ VGS = 2.5V
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