IRF7459 specification: HEXFET power MOSFET. VDSS = 20V, RDS(on) = 9.0 mOhm,, ID = 12A

IRF7459 Liknande

IRF7103
- N-channel power MOSFET for fast switching applications, 50V, 3A
IRF7103Q
- N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A
IRF7103Q
- N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A
IRF7103QTR
- N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A
IRF720
- N-channel HEXFET, 400V, 3.3A
IRF7204
- P-channel MOSFET for fast switching applications, 20V, 5.3A
IRF721
- N-channel HEXFET, 350V, 3.3A
IRF722
- N-channel HEXFET, 400V, 2.8A

IRF7459 Datasheet och Spec

Tillverkare : IR

Packing : SO

Pins : 8

Temperature : Min -55 °C | Max 150 °C

Storlek : 123 KB

Ansökan : HEXFET power MOSFET. VDSS = 20V, RDS(on) = 9.0 mOhm,, ID = 12A