IRF7467 specification: HEXFET power MOSFET. VDSS = 30V, RDS(on) = 12mOhm, ID = 11A

IRF7467 Liknande

IRF7103
- N-channel power MOSFET for fast switching applications, 50V, 3A
IRF7103Q
- N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A
IRF7103Q
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IRF7103QTR
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IRF720
- N-channel HEXFET, 400V, 3.3A
IRF7204
- P-channel MOSFET for fast switching applications, 20V, 5.3A
IRF721
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IRF722
- N-channel HEXFET, 400V, 2.8A

IRF7467 Datasheet och Spec

Tillverkare : IR

Packing : SO

Pins : 8

Temperature : Min -55 °C | Max 150 °C

Storlek : 125 KB

Ansökan : HEXFET power MOSFET. VDSS = 30V, RDS(on) = 12mOhm, ID = 11A