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IRF7506 specification: HEXFET power MOSFET. VDSS = -30V, RDS(on) = 0.27 Ohm
IRF7506 Liknande
- IRF7103
- N-channel power MOSFET for fast switching applications, 50V, 3A
- IRF7103Q
- N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A
- IRF7103Q
- N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A
- IRF7103QTR
- N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A
- IRF720
- N-channel HEXFET, 400V, 3.3A
- IRF7204
- P-channel MOSFET for fast switching applications, 20V, 5.3A
- IRF721
- N-channel HEXFET, 350V, 3.3A
- IRF722
- N-channel HEXFET, 400V, 2.8A
IRF7506 Datasheet och Spec
Tillverkare : IR
Packing : Micro8
Pins : 8
Temperature : Min -55 °C | Max 150 °C
Storlek : 113 KB
Ansökan : HEXFET power MOSFET. VDSS = -30V, RDS(on) = 0.27 Ohm
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