IRF9Z24S specification: HEXFET power MOSFET. VDSS = -60V, RDS(on) = 0.28 Ohm, ID = -11A

IRF9Z24S Liknande

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- HEXFET transistor thru-hole. BVDS = -200V, RDS(on) = 0.5 Ohm , ID = -11A
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IRF9Z24S Datasheet och Spec

Tillverkare : IR

Packing : DDPak

Pins : 3

Temperature : Min -55 °C | Max 175 °C

Storlek : 342 KB

Ansökan : HEXFET power MOSFET. VDSS = -60V, RDS(on) = 0.28 Ohm, ID = -11A