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IRFB13N50A specification: HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.450 Ohm, ID = 14A
IRFB13N50A Liknande
- IRFB11N50A
- HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.52 Ohm, ID = 11A
- IRFB13N50A
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- IRFB33N15D
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IRFB13N50A Datasheet och Spec
Tillverkare : IR
Packing :
Pins : 3
Temperature : Min -55 °C | Max 150 °C
Storlek : 106 KB
Ansökan : HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.450 Ohm, ID = 14A
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