IRFI620G specification: HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.80 Ohm, ID = 4 .1 A

IRFI620G Liknande

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- HEXFET transistror. BVDSS = 60V, RDS(on) = 0.017 Ohm, ID = 45 A
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- HEXFET power MOSFET
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- HEXFET transistor
IRFI3205
- "HEXFET power MOSFET. VDSS = 55V, RDS(on) = 0.008 Ohm, ID = 64 A"
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- HEXFET transistor (N-channel). BVDSS = 400V, RDS(on) = 0.20 Ohm, ID = 25 A
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- HEXFET transistor (N-channel). BVDSS = 500V, RDS(on) = 0.27 Ohm, ID = 21 A

IRFI620G Datasheet och Spec

Tillverkare : IR

Packing : TO-220 FULLPAK

Pins : 3

Temperature : Min -55 °C | Max 150 °C

Storlek : 190 KB

Ansökan : HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.80 Ohm, ID = 4 .1 A