Path:OKDatasheet > Semiconductor Datasheet > IR Datasheet > IRFIBF30G
IRFIBF30G specification: HEXFET power MOSFET. VDSS = 900V, RDS(on) = 3.7 Ohm, ID = 1.9A
Path:OKDatasheet > Semiconductor Datasheet > IR Datasheet > IRFIBF30G
IRFIBF30G specification: HEXFET power MOSFET. VDSS = 900V, RDS(on) = 3.7 Ohm, ID = 1.9A
Tillverkare : IR
Packing : TO-220 FULLPAK
Pins : 3
Temperature : Min -55 °C | Max 150 °C
Storlek : 183 KB
Ansökan : HEXFET power MOSFET. VDSS = 900V, RDS(on) = 3.7 Ohm, ID = 1.9A