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IRFS59N10D specification: HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.025 Ohm, ID = 58A
IRFS59N10D Liknande
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- IRFS59N10D
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.025 Ohm, ID = 58A
IRFS59N10D Datasheet och Spec
Tillverkare : IR
Packing : DDPak
Pins : 3
Temperature : Min -55 °C | Max 175 °C
Storlek : 151 KB
Ansökan : HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.025 Ohm, ID = 58A
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