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IRFU120N specification: HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.21 Ohm, ID = 9.4A
IRFU120N Liknande
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- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.21 Ohm, ID = 9.4A
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IRFU120N Datasheet och Spec
Tillverkare : IR
Packing : I-PAK
Pins : 3
Temperature : Min -55 °C | Max 175 °C
Storlek : 156 KB
Ansökan : HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.21 Ohm, ID = 9.4A
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