okDatasheet.com

IRG4PH40KD Liknande

  • IRG4BC10K
    • Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.39V @ VGE = 15V, IC = 5.0A
  • IRG4BC10KD
    • Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.39V @ VGE = 15V, IC = 5.0A
  • IRG4BC10S
    • Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A
  • IRG4BC10SD
    • Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A
  • IRG4BC10SD-L
    • Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A
  • IRG4BC10SD-L
    • Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A
  • IRG4BC10SD-S
    • Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A
  • IRG4BC10UD
    • Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.150V @ VGE = 15V, IC = 5.0A, tf(typ) = 140ns.

IRG4PH40KD Datasheet och Spec

Tillverkare : IR 

Packing : TO-247AC 

Pins : 3 

Temperature : Min -55 °C | Max 150 °C

Storlek : 238 KB

Ansökan : Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 1200V, VCE(on)typ. = 2.74V @ VGE = 15V, IC = 15A 

IRG4PH40KD PDF Ladda ner